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Nexperia PBSS5230T,215

PBSS5230T - 30 V, 2 A PNP low VCEsat (BISS) transistor

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
PNP
RoHS
Compliant

Dimensions

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Height
6.35 mm
Length
6.35 mm
Width
6.35 mm

Physical

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Case/Package
TO-236-3
Contact Plating
Tin
Mount
-65 °C
Number of Pins
3
Weight
4.535924 g

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
30 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Voltage (VCEO)
30 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
Max Breakdown Voltage
30 V
Max Collector Current
2:00 AM
Max Operating Temperature
2 A
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Digi-Reel®
Polarity
Digi-Reel®
Power Dissipation
480 mW
Transition Frequency
200 MHz

Compliance Documents

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