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Nexperia PBSS4580PA,115

PBSS4580PA - 80 V, 5.6 A NPN low V_CEsat (BISS) transistor

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
650 µm

Physical

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Case/Package
SOT-1061
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Ambient Temperature Range High
150 °C
Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
230 mV
Collector Emitter Voltage (VCEO)
80 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
155 MHz
Gain Bandwidth Product
155 MHz
hFE Min
650 µm
Max Breakdown Voltage
80 V
Max Collector Current
5.6 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.1 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Digi-Reel®
Polarity
Digi-Reel®
Power Dissipation
500 mW
Transition Frequency
155 MHz

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