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Nexperia BUK965R8-100E,118

Transistor MOSFET N-Channel 100V 120A 3-Pin D2PAK

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
SOT
Contact Plating
Tin
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
120 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
5.8 mΩ
Drain to Source Voltage (Vdss)
100 V
Fall Time
148 ns
Gate to Source Voltage (Vgs)
10 V
Input Capacitance
17.46 nF
Max Dual Supply Voltage
100 V
Max Operating Temperature
175 °C
Max Power Dissipation
357 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
357 W
Rds On Max
5.8 mΩ
Rise Time
168 ns
Turn-Off Delay Time
237 ns
Turn-On Delay Time
81 ns

Compliance Documents

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