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Nexperia BCW89,215

Bipolar (BJT) Transistor PNP 6 V 1 mA 15MHz 25 mW Surface Mount TO-236AB

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1.1 mm

Physical

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Case/Package
TO-236-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Ambient Temperature Range High
150 °C
Collector Base Voltage (VCBO)
-80 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
-150 mV
Collector Emitter Voltage (VCEO)
-60 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
150 MHz
Gain Bandwidth Product
150 MHz
hFE Min
120
Max Breakdown Voltage
60 V
Max Collector Current
-100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
PNP
Power Dissipation
250 mW
Transition Frequency
150 MHz

Compliance Documents

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