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Nexperia BC857BV,115

BC857 Series 45 V 100 mA 200 mW PNP General Purpose Double Transistor - SOT-666

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
600 µm
Length
1.7 mm
Width
1.3 mm

Physical

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Case/Package
SOT-666
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
4.535924 g

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
400 mV
Collector Emitter Voltage (VCEO)
45 V
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
Forward Current
15 mA
Forward Voltage
1 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
200
Max Breakdown Voltage
45 V
Max Collector Current
100 mA
Max Forward Surge Current (Ifsm)
100 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Max Repetitive Reverse Voltage (Vrrm)
70 V
Min Operating Temperature
-65 °C
Number of Elements
2
Packaging
Tape & Reel
Polarity
PNP
Power Dissipation
200 mW
Termination
SMD/SMT
Transition Frequency
100 MHz

Compliance Documents

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