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Microchip APTM100TA35SCTPG

Power Field-Effect Transistor, 22A I(D), 3-Element, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
420 mΩ

Dimensions

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Height
12 mm

Physical

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Case/Package
Module
Mount
-40 °C

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
22 A
Drain to Source Breakdown Voltage
1 kV
Drain to Source Resistance
350 mΩ
Drain to Source Voltage (Vdss)
350 mΩ
Fall Time
40 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
5.2 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-40 °C
Number of Channels
6
Packaging
Bulk
Power Dissipation
390 W
Rds On Max
420 mΩ
Rise Time
12 ns
Turn-Off Delay Time
155 ns
Turn-On Delay Time
18 ns

Compliance Documents

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