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Infineon BTS3118DATMA1

N channel vertical power FET in Smart SIPMOS technology, PG-TO252-3, RoHS

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Contains Lead
RoHS
Compliant

Physical

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Case/Package
TO-252-3
Mount
-40 °C

Supply Chain

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Lifecycle Status
Production

Technical

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Drain to Source Voltage (Vdss)
42 V
Fault Protection
Over Temperature, Over Voltage
Interface
On/Off
Max Dual Supply Voltage
42 V
Max Operating Temperature
150 °C
Max Output Current
150 °C
Max Power Dissipation
21 W
Min Operating Temperature
-40 °C
Nominal Input Voltage
42 V
Number of Channels
1
Number of Outputs
1
On-State Resistance
100 mΩ
Output Configuration
100 mΩ
Output Current
2.4 A
Output Voltage
Low Side
Package Quantity
2500
Packaging
Tape & Reel
Power Dissipation
21 W

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