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Infineon BSZ160N10NS3GATMA1

MOSFET, N-CH, 100V, 40A, 8TSDSON; Transistor Polarity: N Channel; Continuous Drai

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
16 mΩ

Dimensions

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Height
1.1 mm
Length
3.4 mm
Width
3.4 mm

Physical

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Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
40 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
16 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.3 nF
Max Operating Temperature
150 °C
Max Power Dissipation
63 W
Min Operating Temperature
-55 °C
Nominal Vgs
2.8 V
On-State Resistance
16 mΩ
Package Quantity
16 mΩ
Packaging
5000
Power Dissipation
2.1 W
Rds On Max
63 W
Rise Time
10 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
22 ns
Turn-On Delay Time
IBS

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