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Infineon BSO615NGXUMA1

Dual N-Channel 60 V 2.6 A 0.15 O 14 nC SipMOS Small Signal Transistor - SOIC-8

Product Details

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Dimensions

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Height
1.75 mm

Technical

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Continuous Drain Current (ID)
2.6 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
120 mΩ
Drain to Source Voltage (Vdss)
120 mΩ
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Number of Channels
-55 °C
Power Dissipation
2 W
Turn-Off Delay Time
20 ns
Turn-On Delay Time
12 ns

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