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Home Products Discrete Semiconductors Transistors BSM50GX120DN2

Infineon BSM50GX120DN2

Insulated Gate Bipolar Transistor, 115A I(C), 1200V V(BR)CES, N-Channel

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RoHS
Compliant

Technical

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Collector Emitter Saturation Voltage
2.5 V
Collector Emitter Voltage (VCEO)
1.2 kV
Max Operating Temperature
150 °C
Max Power Dissipation
400 W
Min Operating Temperature
-55 °C

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