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Infineon BSC010NE2LSATMA1

Transistor, MOSFET, N-channel, 25V, 39A, 1.0 mOhm, 242A, 33 nC, TSDSON8 Infineon BSC010NE2LS

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
1.1 mm

Physical

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Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
39 A
Drain to Source Breakdown Voltage
25 V
Drain to Source Resistance
800 µΩ
Drain to Source Voltage (Vdss)
25 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.7 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
1 mΩ
Package Quantity
5000
Packaging
Tape & Reel
Power Dissipation
96 W
Rise Time
6 ns
Turn-Off Delay Time
34 ns
Turn-On Delay Time
6.7 ns

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