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Infineon BFT92E6327

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, PNP

Product Details

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Compliance

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RoHS
Compliant

Physical

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Case/Package
TO-236-3
Mount
-65 °C
Number of Pins
3

Technical

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related specs
Collector Base Voltage (VCBO)
20 V
Collector Emitter Breakdown Voltage
15 V
Collector Emitter Voltage (VCEO)
15 V
Current Rating
-25 mA
Emitter Base Voltage (VEBO)
2 V
Frequency
5 GHz
Gain
13.5 dB
Max Breakdown Voltage
15 V
Max Collector Current
25 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200 mW
Transition Frequency
5 GHz
Voltage Rating (DC)
-15 V

Compliance Documents

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