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Infineon BFS483H6327XTSA1

BFS483 Series 12 V 65 mA Low Noise Silicon Bipolar RF Transistor - SOT-363-6

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Physical

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Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
20 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
12 V
Emitter Base Voltage (VEBO)
2 V
Frequency
8 GHz
Gain
19 dB
Max Breakdown Voltage
12 V
Max Collector Current
65 mA
Max Operating Temperature
150 °C
Max Power Dissipation
450 mW
Min Operating Temperature
-65 °C
Noise Figure
0.9 dB
Number of Elements
2
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
450 mW
Power Gain
19 dB
Transition Frequency
8 GHz

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