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Infineon BFR360FH6327XTSA1

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, S Band, Silicon, NPN

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

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Case/Package
SOT-343
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
15 V
Collector Emitter Breakdown Voltage
6 V
Collector Emitter Voltage (VCEO)
6 V
Emitter Base Voltage (VEBO)
2 V
Frequency
14 GHz
Gain
15.5 dB
hFE Min
60
Max Breakdown Voltage
9 V
Max Collector Current
35 mA
Max Operating Temperature
150 °C
Max Power Dissipation
210 mW
Min Operating Temperature
-60 °C
Noise Figure
1 dB
Number of Elements
1
Package Quantity
3000
Packaging
Cut Tape (CT)
Polarity
Tape & Reel
Power Dissipation
210 mW
Power Gain
15.5 dB
Termination
SMD/SMT
Test Frequency
1.8 GHz
Transition Frequency
IBS

Compliance Documents

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