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Infineon BF999E6327HTSA1

Transistor: N-MOSFET, unipolar, RF, 12V, 30mA, 200mW, SOT23, SMT

Product Details

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Compliance

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Halogen Free
Not Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

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Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
NRND

Technical

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Continuous Drain Current (ID)
30 mA
Current Rating
30 mA
Frequency
45 MHz
Gain
27 dB
Gate to Source Voltage (Vgs)
12 V
Max Frequency
300 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Noise Figure
1 dB
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Power Dissipation
200 mW
Test Current
10 mA
Test Voltage
10 V
Voltage Rating
20 V
Voltage Rating (DC)
20 V

Compliance Documents

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