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Infineon BF1005SE6327

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
1 mm
Length
2.9 mm
Width
IBS

Physical

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Case/Package
SOT-143
Mount
-55 °C
Number of Pins
4

Technical

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Continuous Drain Current (ID)
25 mA
Current Rating
25 mA
Drain to Source Voltage (Vdss)
8 V
Frequency
800 MHz
Gain
22 dB
Gate to Source Voltage (Vgs)
3 V
Input Capacitance
2.5 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Noise Figure
1.6 dB
Output Power
200 mW
Test Voltage
5 V
Voltage Rating
8 V
Voltage Rating (DC)
8 V

Compliance Documents

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