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Infineon BCW60CE6327HTSA1

Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

Product Details

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Compliance

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Halogen Free
Not Halogen Free
Lead Free
900 µm
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
900 µm
Length
2.9 mm
Width
1.3 mm

Physical

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Case/Package
SOT
Contact Plating
Tin
Mount
-65 °C
Number of Pins
3

Supply Chain

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Lifecycle Status
NRND

Technical

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Collector Base Voltage (VCBO)
32 V
Collector Emitter Breakdown Voltage
32 V
Collector Emitter Saturation Voltage
550 mV
Collector Emitter Voltage (VCEO)
32 V
Continuous Collector Current
100 mA
Current Rating
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
250 MHz
Gain Bandwidth Product
250 MHz
Max Breakdown Voltage
32 V
Max Collector Current
100 mA
Max Frequency
250 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Package Quantity
3000
Packaging
Cut Tape (CT)
Polarity
NPN
Power Dissipation
Tape & Reel
Transition Frequency
250 MHz
Voltage Rating (DC)
32 V

Compliance Documents

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