Skip to main content

Infineon BCR185SH6327XTSA1

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 5V 1mA 2MHz 25mW Surface Mount PG-SOT363-6

Product Details

Find similar products  

Compliance

Select to search
related specs
Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Select to search
related specs
Height
800 µm
Length
2 mm
Width
1.25 mm

Physical

Select to search
related specs
Case/Package
SOT
Mount
Surface Mount
Number of Pins
6

Supply Chain

Select to search
related specs
Lifecycle Status
NRND

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
6 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
100 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
50 V
hFE Min
800 µm
Input Resistance
10 kΩ
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Package Quantity
3000
Packaging
Tape & Reel
Polarity
PNP
Power Dissipation
250 mW
Transition Frequency
200 MHz

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us