Skip to main content

Infineon AUIRLR024N

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
3000
REACH SVHC
No SVHC
RoHS
65 mΩ

Dimensions

Select to search
related specs
Height
2.39 mm
Length
6.73 mm
Width
IBS

Physical

Select to search
related specs
Case/Package
DPAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Supply Chain

Select to search
related specs
Lifecycle Status
Obsolete

Technical

Select to search
related specs
Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
65 mΩ
Drain to Source Voltage (Vdss)
65 mΩ
Element Configuration
Single
Fall Time
29 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
480 pF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
65 mΩ
Package Quantity
65 mΩ
Power Dissipation
45 W
Rds On Max
65 mΩ
Rise Time
74 ns
Threshold Voltage
1 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
Compliant

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us