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Infineon 2N6798

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
25 W
RoHS
Non-Compliant

Dimensions

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Height
4.57 mm
Lead Length
14.22 mm

Physical

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Case/Package
TO-39
Contact Plating
Lead, Tin
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
5.5 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
400 mΩ
Drain to Source Voltage (Vdss)
400 mΩ
Dual Supply Voltage
200 V
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
4 V
Number of Channels
1
Number of Elements
1
On-State Resistance
400 mΩ
Power Dissipation
400 mΩ
Termination
Through Hole
Turn-Off Delay Time
50 ns
Turn-On Delay Time
30 ns

Compliance Documents

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