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EPC EPC2034C

Power Field-Effect Transistor, 48A I(D), 200V, 0.008ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide...

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Dimensions

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Height
790 µm

Technical

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Continuous Drain Current (ID)
48 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
6 mΩ
Drain to Source Voltage (Vdss)
200 V
Gate to Source Voltage (Vgs)
6 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Number of Channels
1

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