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Diodes Inc. DMP56D0UFB-7

P-Channel 50 V 6 Ohm 425 mW Enhancement Mode Mosfet - X1-DFN1006-3

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
6 Ω

Dimensions

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Height
480 µm
Length
1.08 mm
Width
675 µm

Physical

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Case/Package
DFN
Mount
-55 °C
Number of Pins
3

Technical

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Continuous Drain Current (ID)
200 mA
Drain to Source Resistance
8 Ω
Drain to Source Voltage (Vdss)
8 Ω
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
480 µm
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Packaging
Tape & Reel
Rds On Max
6 Ω
Rise Time
6.63 ns
Turn-Off Delay Time
21.9 ns
Turn-On Delay Time
Compliant

Compliance Documents

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