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Diodes Inc. DMP2022LSS-13

P-Channel 20 V 13 mOhm 2.5 W SMT Enhancement Mode Mosfet - SOIC-8

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
13 mΩ

Dimensions

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Height
1.5 mm
Length
5.3 mm
Width
4.1 mm

Physical

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Case/Package
SOP
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
IBS

Technical

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Continuous Drain Current (ID)
-10 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
8 mΩ
Drain to Source Voltage (Vdss)
8 mΩ
Element Configuration
Single
Fall Time
76.5 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
1.7 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5 W
Rds On Max
13 mΩ
Rise Time
9.9 ns
Threshold Voltage
770 mV
Turn-Off Delay Time
Compliant
Turn-On Delay Time
7.5 ns

Compliance Documents

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