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Diodes Inc. DMN62D1LFD-13

MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF

Product Details

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Compliance

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RoHS
2 Ω

Physical

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Mount
-55 °C
Number of Pins
3

Technical

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Capacitance
32 pF
Continuous Drain Current (ID)
400 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
1.4 Ω
Drain to Source Voltage (Vdss)
1.4 Ω
Element Configuration
Single
Fall Time
13.9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
36 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Rds On Max
2 Ω
Rise Time
2.8 ns
Turn-Off Delay Time
21 ns
Turn-On Delay Time
2.1 ns

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