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Diodes Inc. DMN2005UFG-13

MOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05W

Product Details

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Compliance

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RoHS
4.6 mΩ

Physical

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Mount
-55 °C
Number of Pins
8
Weight
72.007789 mg

Technical

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Continuous Drain Current (ID)
18.1 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
8.7 mΩ
Drain to Source Voltage (Vdss)
8.7 mΩ
Element Configuration
Single
Fall Time
38 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
6.495 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Rds On Max
4.6 mΩ
Rise Time
25.7 ns
Turn-Off Delay Time
114 ns
Turn-On Delay Time
Compliant

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