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Diodes Inc. DMN10H220LPDW-13

Dual N-Channel Enhancement Mode MOSFET 100V 8A 8-Pin PowerDI T/R

Product Details

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Dimensions

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Height
1.15 mm

Technical

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Continuous Drain Current (ID)
8:00 AM
Drain to Source Breakdown Voltage
8 A
Drain to Source Resistance
208 mΩ
Drain to Source Voltage (Vdss)
208 mΩ
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Number of Channels
-55 °C
Power Dissipation
2.2 W
Turn-Off Delay Time
7.4 ns
Turn-On Delay Time
6.2 ns

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