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Diodes Inc. DMN1032UCB4-7

Transistor, Mosfet, N-ch, 12V, 4.8A, 900MW, 4-UFBGA, SMD

Product Details

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Compliance

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RoHS
Compliant

Physical

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Mount
Surface Mount
Number of Pins
4

Technical

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Continuous Drain Current (ID)
4.8 A
Drain to Source Breakdown Voltage
12 V
Drain to Source Resistance
38 mΩ
Drain to Source Voltage (Vdss)
12 V
Element Configuration
Single
Fall Time
9 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
450 pF
Max Operating Temperature
150 °C
Max Power Dissipation
900 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Rds On Max
26 mΩ
Rise Time
5.6 ns
Turn-Off Delay Time
24 ns
Turn-On Delay Time
3.3 ns

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