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Diodes Inc. DMN100-7-F

Diodes Inc. - DMN100-7-F - Mosfet Transistor, N Channel, 1.1 A, 30 V, 0.24 Ohm, 10 V, 3 V

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.3 mm
Length
3.1 mm
Width
1.7 mm

Physical

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Case/Package
SC
Mount
Surface Mount
Number of Pins
3
Weight
7.994566 mg

Technical

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Continuous Drain Current (ID)
1.1 A
Current Rating
1.1 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
170 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
150 pF
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Nominal Vgs
3 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
240 mΩ
Resistance
240 MΩ
Rise Time
15 ns
Termination
SMD/SMT
Threshold Voltage
3 V
Turn-Off Delay Time
25 ns
Turn-On Delay Time
10 ns
Voltage Rating (DC)
30 V

Compliance Documents

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