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Diodes Inc. 2DD2661-13

DIODES INC. 2DD2661-13 Bipolar (BJT) Single Transistor, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE

Product Details

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Compliance

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Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.5 mm
Length
4.5 mm
Width
2.5 mm

Physical

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Case/Package
SOT-89
Mount
Surface Mount
Number of Pins
4
Weight
51.993025 mg

Technical

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Collector Base Voltage (VCBO)
15 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Saturation Voltage
180 mV
Collector Emitter Voltage (VCEO)
12 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
170 MHz
Gain Bandwidth Product
170 MHz
Manufacturer Package Identifier
2DD2661-13
Max Breakdown Voltage
12 V
Max Collector Current
2 A
Max Operating Temperature
2:00 AM
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
NPN
Power Dissipation
2 W
Transition Frequency
170 MHz

Compliance Documents

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